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Package design optimization for efficient on-chip-capacitance leveraging

机译:封装设计优化,可有效利用芯片上的电容

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This paper focuses on the power delivery network (PDN) characterization of high speed IC; particularly focusing on the on-chip capacitance (Cdie). Three packages were used to examine how Cdie would vary when selected power rails were merged on package. The first package carries isolated power rails where each and every power rails are separated. The second package combines IO power rails which were adjacent to each other, and the third package combined all common voltage power rails across the entire chip. The Cdie contributed from each I/O buffers as well as Core were measured and compared with the Cdie on the first package design; where all power rails were isolated. It was found that not 100% of the Cdie is visible when the power rails were merged. For example: the design allocated 100nF of Cdie in the silicon; however, only 66nF is measured on a merged-power-rail-package as oppose to 100nF Cdie is measured on the standard standalone-power-rail-package design. As much as 15% – 44% Cdie was found missing on a merged power rails compare to the original Cdie build in. This paper will describe a methodology to measure and characterize the Cdie, and propose a design guideline to suggest the best way to design a package to ensure that the Cdie is properly leveraged across when a power rail merger is implemented.
机译:本文着重研究高速IC的功率传输网络(PDN)特性。特别关注片上电容(Cdie)。三个包被用来研究时所选择的电源轨进行软件包合并Cdie会有所不同。第一个包装带有隔离的电源轨,其中每个电源轨都分开。第二个封装结合了彼此相邻的IO电源轨,第三个封装结合了整个芯片上的所有公共电压电源轨。测量了每个I / O缓冲区以及Core所贡献的Cdie,并将其与第一个封装设计中的Cdie进行了比较;所有电源轨都被隔离的地方。发现合并电源导轨时,看不到Cdie的100%。例如:设计在硅片中分配了100nF的Cdie。但是,在合并电源导轨封装上仅测量66nF,而在标准独立电源导轨封装设计上则与100nF Cdie相反。与原始的Cdie相比,在合并的电源轨中发现多达15%– 44%的Cdie。本文将介绍测量和表征Cdie的方法,并提出设计指南,以建议最佳的设计方法一个软件包,以确保在实施电源轨合并时适当地利用Cdie。

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