Process Variation Tolerant SRAM Cell Design

摘要

One of the major hurdles in the design of Static Random Access Memory (SRAM) cell is the ever increasing process variations. To counter this researchers have proposed various bit-cell and non-bit-cell oriented designs. However, the proposed techniques require additional circuitry and hence account for large area overhead. In this paper we propose the use of rise time of word-line signal as a measure to reduce the impact of the process variations on the SRAM cells. Simulation results show that using a higher rise time resulted in drastic reduction in the number of cells that fail to read or write. Number of cells that can successfully write or read improved from 82% to 98.2% and 90% to 98.8% respectively. However, there is some speed penalty to achieve this.