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Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate

机译：AuSn基板上的柔性垂直结构GaN基发光二极管

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摘要

By combining the metal bonding/debonding and laser lift off techniques, a new approach to fabricating flexible vertical structure GaN-based light emitting diodes (F-LEDs) has been developed. The performance of these F-LEDs under different bending radii was investigated in detail.

机译：通过结合金属键合/剥离和激光剥离技术，已开发出一种新的制造柔性垂直结构的GaN基发光二极管（F-LED）的方法。详细研究了这些F-LED在不同弯曲半径下的性能。

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来源
《2011 IEEE Photonics Conference 》|2011年|p.551-552|共2页
会议地点
作者
Tian Pengfei; Xie Enyuan; Gong Zheng; Chen Zhizhong; Yu Tongjun; Sun Yongjian; Qi Shengli; Chen Yujie; Zhang Yanfeng; Calvez Stephane; Gu Erdan; Zhang Guoyi; Dawson Martin D.;
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正文语种
中图分类光电子技术、激光技术 ;
关键词
AuSn; Flexible optoelectronics; GaN; vertical structure LEDs;

机译：AuSn;柔性光电; GaN;垂直结构LED;

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专利

1. Sapphire Substrate Processing for High-Performance GaN-Based Light-Emitting Diodes: Micropatterning of Sapphire Substrates and Its Effect on Light Enhancement in GaN-Based Light-Emitting Diodes [J] . Natsuko Aota, Hideo Aida, Yutaka Kimura, Sensors and materials . 2014 ,第6期

机译：高性能基于GaN的发光二极管的蓝宝石衬底处理：蓝宝石衬底的微图案化及其对基于GaN的发光二极管中光增强的影响
2. A Screen-Printed Sn-Based Substrate Technology for the Fabrication of Vertical-Structured GaN-Based Light-Emitting Diodes [J] . Pei-Ren Wang, Shui-Jinn Wang, Hon-Yi Kuo, Japanese journal of applied physics . 2010 ,第4issue2期

机译：丝网印刷锡基衬底技术用于制造垂直结构的氮化镓基发光二极管
3. A Sn-based metal substrate technology for the fabrication of vertical-structured GaN-based light-emitting diodes [J] . Hon-Yi Kuo, Shui-Jinn Wang, Pei-Ren Wang, Applied Physics Letters . 2008 ,第2期

机译：用于制造垂直结构的GaN基发光二极管的Sn基金属衬底技术
4. Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate [C] . Tian Pengfei, Xie Enyuan, Gong Zheng, IEEE Photonics Conference . 2011

机译：柔性垂直结构GaN的AUSN衬底上的发光二极管
5. Optically functional structures on GaN-based light-emitting diodes for light-extraction efficiency enhancement and emission pattern control. [D] . Ma, Ming. 2013

机译：GaN基发光二极管上的光学功能结构，用于提高光提取效率和控制发射模式。
6. High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate [O] . Qiang Zhao, Jiahao Miao, Shengjun Zhou, 2019

机译：4英寸硅衬底上的高功率基于GaN的垂直发光二极管
7. High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate [O] . Qiang Zhao, Jiahao Miao, Shengjun Zhou, 2019

机译：基于高功率的GaN的垂直发光二极管在4英寸硅衬底上

Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate

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