An Analytical Drain Current Model for Short-Channel Triple-Material Double-Gate MOSFETs

机译：短沟道三材料双栅极MOSFET的分析漏电流模型

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In this paper, a strong inversion drain current model incorporating various effects such as channel length modulation has been developed for a short-channel symmetrical triple material -- double gate (TM-DG) MOSFET based on the drift current equation. The model results have been compared with the simulation data obtained by using the commercially available device simulation software ATLAS™.

机译：本文基于漂移电流方程，针对短沟道对称三重材料-双栅极（TM-DG）MOSFET开发了一种强大的反型漏极电流模型，该模型具有多种效应，例如沟道长度调制。已将模型结果与通过使用市售的设备仿真软件ATLAS™获得的仿真数据进行了比较。

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《2011 IEEE Computer Society Annual Symposium on VLSI》|2011年|p.327-328|共2页
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Agnihotri Harshit; Ranjan Abhishek; Tiwari Pramod Kumar; Jit S.;
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正文语种
中图分类大规模集成电路、超大规模集成电路;
关键词
TM DG MOSFET; drain current; drift current; hot- carrier effects;

机译：TM DG MOSFET;漏极电流;漂移电流;热载流子效应;

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专利

1. Analytical modeling of subthreshold current and subthreshold swing of short-channel triple-material double-gate (TM-DG) MOSFETs [J] . Pramod Kumar Tiwari, Sarvesh Dubey, Kunal Singh, Superlattices and microstructures . 2012,第5期

机译：短沟道三材料双栅极（TM-DG）MOSFET的亚阈值电流和亚阈值摆幅的分析模型
2. Two-dimensional analytical model of threshold voltage and drain current of a double-halo gate-stacked triple-material double-gate MOSFET [J] . Mahmud Md. Arafat, Subrina Samia Journal of Computational Electronics . 2016,第2期

机译：双卤栅堆叠三材料双栅MOSFET阈值电压和漏极电流的二维分析模型
3. A Quasi-Two-Dimensional Compact Drain–Current Model for Undoped Symmetric Double-Gate MOSFETs Including Short-Channel Effects [J] . Lime F., Iniguez B., Moldovan O. IEEE Transactions on Electron Devices . 2008,第6期

机译：包含短沟道效应的非掺杂对称双栅MOSFET的准二维紧凑漏极电流模型
4. An Analytical Drain Current Model for Short-Channel Triple-Material Double-Gate MOSFETs [C] . Agnihotri Harshit, Ranjan Abhishek, Tiwari Pramod Kumar, IEEE Computer Society Annual Symposium on VLSI . 2011

机译：用于短通道三重材料双栅MOSFET的分析漏极电流模型
5. Analytical Modeling of Drain-Current Characteristics of AlGaN/GaN HFETs with Incorporation of the Impacts of Virtual-Gate and Transferred-Electron Effect. [D] . Moradi, Maziar. 2010

机译：结合虚拟栅极和转移电子效应的影响，对AlGaN / GaN HFET的漏极电流特性进行分析建模。
6. A quasi-ballistic drain current charge and capacitance model with positional carrier scattering dependency valid for symmetric DG MOSFETs in nanoscale regime [O] . Vyas R. Murnal, C. Vijaya 2019

机译：具有位置载流子散射相关性的准弹道漏电流电荷和电容模型对纳米级对称DG MOSFET有效
7. Modeling of Electrostatics and Drain Current in Nanoscale Double-Gate MOSFETs [O] . Kolberg Sigbjørn 2007

机译：纳米级双栅极MOSFET中的静电和漏极电流建模

An Analytical Drain Current Model for Short-Channel Triple-Material Double-Gate MOSFETs

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