Monte Carlo simulation study of hole mobility in germanium MOS inversion layers

摘要

In this paper transport in the inversion layer of a Ge channel pMOS structure is studied using a full 6-band k·p Monte Carlo simulator. In addition to the usual bulk-scattering mechanisms, which are calibrated and validated against the available experimental data, effects of the gate stack are included via SO phonons and surface roughness scattering. Through careful calibration and consideration of these mechanisms, good qualitative and quantitative agreement is achieved with experimental data.