A metrology of silicon film thermal conductivity using micro-Raman spectroscopy

摘要

We present a steady state technique enhanced with micro-Raman spectroscopy to measure thermal conductivity of SOI silicon device layer. This metrology, comparing to conventional technique based on thermistor, exhibits two improvements: robustness against ambient disturbance, which leads to an error of 28%, and reduction on measurement system error from 20% to 10%.