Electrophysical and mechanical characteristics of metal — Nanostructured p-Si contacts with Schottky barrier

摘要

Current-voltage characteristics of metal — nanos-tructured p silicon structure, which was received by the chemical machining in etchant Si layers superficial at SiO2-Si structures, are investigated in the present work. It is established that current depends on electrical voltage according to I ∼ U². It confirms the injection character of these currents. Reverse current is influenced on by properties of potential Schottky barrier.