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Novel schottky barrier metal-germanium contact in metal-germanium-metal photodetectors
Novel schottky barrier metal-germanium contact in metal-germanium-metal photodetectors
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机译:金属锗金属探测器中的新型肖特基势垒金属锗接触
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摘要
Metal-Semiconductor-Metal (“MSM”) photodetectors and methods to fabricate thereof are described. The MSM photodetector includes a thin heavily doped (“delta doped”) layer deposited at an interface between metal contacts and a semiconductor layer to reduce a dark current of the MSM photodetector. In one embodiment, the semiconductor layer is an intrinsic semiconductor layer. In one embodiment, the thickness of the delta doped layer is less than 100 nanometers. In one embodiment, the delta doped layer has a dopant concentration of at least 1×1018 cm−3. A delta doped layer is formed on portions of a semiconductor layer over a substrate. Metal contacts are formed on the delta doped layer. A buffer layer may be formed between the substrate and the semiconductor layer. In one embodiment, the substrate includes silicon, and the semiconductor layer includes germanium.
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机译:描述了金属半导体金属(“ MSM”)光电探测器及其制造方法。 MSM光电检测器包括沉积在金属触点与半导体层之间的界面处的薄重掺杂(“δ掺杂”)薄层,以减小MSM光电检测器的暗电流。在一实施例中,半导体层是本征半导体层。在一实施例中,δ掺杂层的厚度小于100纳米。在一个实施例中,δ掺杂层具有至少1×10 18 Sup> cm -3 Sup>的掺杂剂浓度。在衬底上方的半导体层的部分上形成δ掺杂层。金属接触形成在δ掺杂层上。可以在衬底和半导体层之间形成缓冲层。在一实施例中,衬底包括硅,并且半导体层包括锗。
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