With the increasing applications of high power semiconductor lasers in industrial, advanced manufacturing, military, aerospace, medical systems, display, entertainment. etc., semiconductor lasers with high power and high performances are required. The performance of semiconductor lasers is greatly affected by packaging structure, packaging process and beam shaping. In this work, a high power semiconductor laser vertical stack was successfully fabricated. A series of techniques such as spectrum control and beam control were used to achieve marrow spectrum and high beam quality. The performances of the semiconductor laser vertical stack were characterized. A high power of 2500 W, a narrow spectrum of 3.11 nm and an excellent rectangular beam shape were obtained. The lifetime of the vertical stack laser was tested as well.
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