Negative Bias Temperature Instability (NBTI) in PMOS transistors is a major reliability concern in MOS technology. However, the effect of NBTI is yet to be studied in Nanoelectromechanical Field Effect Transistor (NEMFET). In this paper we study the NBTI for p-type NEMFET, for the first time within Reaction-Diffusion (RD) framework - well established for studying NBTI in MOS transistors. Therefore, we show that NBTI for NEMFET is worse than that for CMOSFET. Our theoretical analysis suggests that NBTI in NEMFET may significantly reduce the pull-out voltage of the device and may result in permanent failure of the device.
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