Fabrication of III-V semicondctor nanowires by SA-MOVPE and their applications to photonic and photovoltaic devices

摘要

We fabricated various kinds of III-V semiconductor nanowires and core-shell nanowires using selective area metalorganic vapor phase epitaxy (SA-MOVPE) on (111) oriented substrates, such as GaAs, GaAs/AlGaAs, InP, InP/InAs/InP on III-V substrates, and InAs and GaAs on Si. As for device applications, we fabricated GaAs/GaAsP core-shell nanowire photo-excited lasers, and InP core-shell pn junction solar cells. I will also introduce III-V semiconductor nanowires grown on Si (111) substrates.