6Å EOT Si0.45Ge0.55 pFETs with 10 year lifetime at operating conditions (VDD=1V) are demonstrated. Ultra-thin EOT is achieved by interfacial layer (IL) scavenging. Negative Bias Temperature Instability (NBTI) is alleviated using a high Ge fraction, a thick SiGe quantum well (QW) and a thin Si cap. Hot Carrier Injection (HCI) and Time Dependent Dielectric Breakdown (TDDB) are shown also to not constitute a showstopper for optimized SiGe devices.
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机译：展示了在工作条件下（V DD = 1V）具有10年寿命的6ÅEOT Si 0.45 Ge 0.55 pFET。超薄EOT通过清除界面层（IL）来实现。使用高Ge分数，较厚的SiGe量子阱（QW）和较薄的Si帽可缓解负偏压温度不稳定性（NBTI）。还显示了热载流子注入（HCI）和随时间变化的介电击穿（TDDB）并不构成优化的SiGe器件的首选。
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