Phase change memory line concept for embedded memory applications

摘要

We report on successful array level integration of a Phase Change Random Access Memory (PCRAM) with a narrow line of doped-Sb2Te phase change material, embedded in a standard 65nm CMOS process. Demonstrator cells can be reversibly reprogrammed between two well-defined resistance levels and correlate well with data achieved on megabit array level. The low process complexity, standard back-end temperature budget and ease of integration combined with the low voltage and current operation makes this line concept highly suitable for embedded PCRAM applications.