A novel low-voltage biasing scheme for double gate FBC achieving 5s retention and 1016 endurance at 85°C

摘要

We demonstrate a novel low-voltage biasing scheme on ultra-thin BOX (UTBOX) FDSOI floating body cells with Lg=55nm and tSi=20nm. By optimizing the front and back gate biasing to enhance the positive feedback loop, the required VDS can be reduced to 1.5V while retention times as high as 5s can still be achieved at 85°C. For the first time, we also show that the stringent endurance spec of 1016 cycles can be met as a result of the VDS reduction.