A MEMS-based temperature-compensated vacuum sensor for low-power monolithic integration

摘要

This paper presents a MEMS resonator-based vacuum sensor with a low-power transimpedance amplifier and a mixer-based frequency-to-digital converter. The MEMS resonator is fabricated in a CMOS-compatible process, and a 130 nm CMOS technology is used to design the integrated circuitry. The vacuum sensor operates in the pressure range from 10 to 1200 mbar with a resolution of ~2 mbar. The system is temperature-compensated between −10°C and 60°C. The simulated power consumption of the entire system is less than 495 μW from a 1 V supply.