Temperature characteristics improvement using strain in barriers of 1.3µm AlGaInAs-InP multiple quantum well laser

摘要

Compressive strain is applied in barriers of multiple quantum well AlGaInAs-InP 1.3µm lasers and cause to better gain and current density in high temperatures .multi band effective mass and quantum electrodynamics theories are used to simulate the structure. The mode gain-current density characteristic is improved more than 20% in 85°C.