A quasi-3D simulation for high-voltage level-shifting circuit by divided RESURF structure

摘要

A new quasi-3D simulation technique to verify the high-voltage level-shifting circuit by divided RESURF structure is proposed. It simulates the 3D performances of the structure by combining the devices paralleled to plane x−y and plane y−z with the circuit analysis advanced application module of Medici. The punch-through effect and parasitic n-MOST effect in the structure are analyzed and simulated. The results prove that only the parasitic n-MOST has been developed in this structure. The optimized parameters of the divided RESURF structure can be proposed to suppress the parasitic n-MOST effect. The quasi-3D simulation technique has many merits, such as computing quickly, no demand on the high-end computer terminals and operating easily.