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Measurement Sampling Frequency Impact on Determining Magnitude of Pattern Placement Errors on Photomasks

机译:测量采样频率对确定光掩模上图案放置误差的幅度的影响

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Current methodologies for determining pattern placement errors on production masks are based primarily on limited sample sizes and Gaussian statistics. These methodologies and accepted practices may not be indicative of the true nature of pattern placement errors actually occurring on the photomasks. Pattern placement errors can originate from a variety of sources on e-beam generated photomasks. Random shot placement errors, localized charging and heating, proximity effects, global charging, and writing strategies may all have an impact on overall pattern placement errors. It is suspected therefore that pattern placement errors on photomasks are not all well approximated as Gaussian, but include a number of significant errors with unique spatial signatures that need to be addressed differently. This paper investigates different measurement sampling strategies on a single leading edge poly layer to determine what level or amount of measurements might be necessary to more accurately determine the probabilities of the true placement errors on the photomask, and what spatially dependent components may or may not be accurately represented in the measurements.
机译:用于确定生产掩模上的图案放置错误的当前方法主要基于有限的样本量和高斯统计量。这些方法和公认的实践可能并不表示光掩模上实际发生的图案放置错误的真实性质。图案放置错误可能源自电子束生成的光掩模上的多种来源。随机的镜头放置错误,局部充电和加热,邻近效应,整体充电和写入策略都可能对总体图案放置错误产生影响。因此,怀疑在光掩模上的图案放置误差并非都很好地近似为高斯,而是包括许多具有独特空间特征的重大误差,需要以不同的方式加以解决。本文研究了单个前沿多晶层上的不同测量采样策略,以确定可能需要什么水平或数量的测量,才能更准确地确定光掩模上真实放置错误的概率,以及哪些空间相关成分可能会或可能不会在测量中准确表示。

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