System-level error correction by read-disturb error model of 1Xnm TLC NAND Flash memory for read-intensive enterprise solid-state drives (SSDs)

摘要

Read-disturb Modeled LDPC (RDM-LDPC) ECC is proposed. Conventional Advanced Error-Prediction LDPC (AEP-LDPC) [1] corrects data-retention errors of data-storage-purpose SSDs storing photos, movies, etc. but cannot correct read-disturb errors. For read-intensive computing-purpose enterprise SSDs, this paper analyzes the read-disturb errors, develops the error model of 1Xnm TLC NAND Flash memory and proposes ECC suitable for read-disturb errors. It is experimentally demonstrated that proposed RDM-LDPC extends the read cycle of SSDs by 5000-times.