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Investigation of single event upset and total ionizing dose in FeRAM for medical electronic tag

机译:医用电子标签Feram中单事件扰乱和全电离剂量的调查

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We investigate the single event upset (SEU) and total ionizing dose (TID) tolerance of FeRAMs fabricated in 180-nm technology against neutron and gamma-ray radiation. Our irradiation tests reveal that the FeRAM has an SEU rate of less than 8.5 × 10 FIT/Gbit for terrestrial neutrons and a tolerance up to the dose of 100-kGy for gamma-ray radiation. These results indicate that the FeRAM is suitable for the medical electronic tags which require sterilization with 25-kGy ionization radiation.
机译:我们调查180-NM技术中的Ferams对中子和γ射线辐射制造的单一事件不适(SEU)和全电离剂量(TID)耐受性。我们的辐照测试表明,Feram的SEU率小于8.5×10适合/ Gbit,用于陆地中子和耐受100 kgy辐射剂量的耐受性。这些结果表明,FERAM适用于需要用25kGy电离辐射进行灭菌的医用电子标签。

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