A new physical insight and 3D device modeling of STI type denmos device failure under ESD conditions

摘要

We present experimental and simulation studies of STI type DeNMOS devices under ESD conditions. The impact of base-push-out, power dissipation because of space charge build-up and, regenerative NPN action, on the various phases of filamentation and the final thermal runaway is discussed. A modification of the device layout is proposed to achieve an improvement (~2X) in failure threshold (I_T2).