Part II: On the Three-Dimensional Filamentation and Failure Modeling of STI Type DeNMOS Device Under Various ESD Conditions

摘要

Time evolution of self-heating and current filamentation are discussed in this paper for shallow-trench-isolation (STI)-type drained-enhanced n-channel metal-oxide-semiconductor (DeNMOS) devices. A deeper insight toward regenerative n-p-n action and its impact over various phases of filamentation and the final thermal runaway is presented. A modified STI-type DeNMOS device is proposed in order to achieve an improvement (similar to 2x) in the failure threshold (I(T2)) and electrostatic discharge (ESD) window (V(T2)). The performance and filament behavior of the standard device under charge-device-model-like ESD conditions is also presented, which is further compared with the proposed modified device.