Characterization of V-defects in InGaN Single-Quantum-Well Films at Nanometer Level by High Spatial Resolution Cathodoluminescence Spectroscopy

摘要

We have measured cathodoluminescence (CL) spectra in the vicinity of V-defects in InGaN single-quantum-well(SQW) films at nanometer level, using newly developed CL apparatus (SE-SEM-CL). From spectroscopic CL measurement, it has been found that the spectra change dramatically in the vicinity of V-defects in the region of ≤50nm. The SE-SEM-CL has a potential to detect the CL spectral variation at spatial resolution with ≤50nm.