12 kV 4H-SiC p-IGBTs with Record Low Specific On-resistance

摘要

DC characteristics of 4H-SiC p-channel IGBTs capable of blocking -12 kV and conducting -0.4 A (-100 A/cm~2) at a forward voltage of-5.2 V at 25°C are demonstrated for the first time. A record low differential on-resistance of 14 mΩ·cm was achieved with a gate bias of -20 V indicating a strong conductivity modulation in the p-type drift region. A moderately doped current enhancement layer grown on the lightly doped drift layer effectively reduces the JFET resistance while maintains a high carrier lifetime for conductivity modulation. A hole MOS channel mobility of 12.5 cm~2/V-s at -20 V of gate bias was measured with a MOS threshold voltage of-5.8 V. The blocking voltage of-12 kV was achieved by Junction Termination Extension (JTE).