950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability

摘要

SiC vertical MOSFETs were fabricated and characterized to achieve a blocking voltage of 950 Volts and a specific on-resistance of 8.4 mΩ-cm~2 . Extrapolations of time-dependent dielectric breakdown measurements versus applied electric field indicate that the gate oxide mean-time to failure is approximately 10~5 hours at 250°C.