Development of High Temperature Lateral HV and LV JFETs in 4H-SiC

摘要

A series of high voltage (HV) and low voltage (LV) lateral JFETs are successfully developed in 4H-SiC based on the vertical channel LJFET (VC-LJFET) device platform. Both room temperature and 300 °C characterizations are presented. The HV JFET shows a specific-on resistance of 12.8 mΩ·cm~2 and is capable of conducting current larger than 3 A at room temperature. A threshold voltage drop of about 0.5 V for HV and LV JFETs is observed when temperature varies from room temperature to 300 °C. The measured increase of specific-on resistance with temperature due to a reduction of electron mobility agrees with the numerical prediction. The first demonstration of SiC power integrated circuits (PIC) is also reported, which shows 5 MHz switching at V_(DS) of 200 V and on-state current of 0.4 A.