Normally-off 4H-SiC Vertical JFET with Large Current Density

摘要

We developed normally-off 4H-SiC vertical junction field effect transistors (JFETs) with large current density. The effect of forming an abrupt junction between the gate and the channel was simulated, and vertical JFETs were then fabricated with abrupt junctions. As a result, a large rated drain current density (500 A/cm~2) and a low specific on-resistance (2.0 mΩcm~2) were achieved for small devices. The blocking voltage was 600 V. These results were due to a reduction of the threshold voltage by forming the abrupt junction between the gate and the channel.