Transient Response to High Energy Heavy Ions in 6H-SiC n~+p Diodes

摘要

Transient currents in 6H-SiC n~+p diodes and those in Si PIN diodes are compared, and the carrier dynamic response to a heavy ion collision is analyzed using Technology Computer Aided Design (TCAD). In case of 6H-SiC n~+p diodes, it is found that the contribution of the ambipolar-diffusion current to total transient current is extremely weak compared to that in Si PIN diodes, since plasma disruption is accelerated by the Auger recombination process in the former.