Properties of high velocity ZnO thin films for saw devices grown by radio frequency magnetron sputtering

摘要

In this paper, ZnO thin films were deposited on SiO₂/Si (100) substrates by radio frequency magnetron sputtering using high purity (99.999%) ZnO target, grown time was 2 h, 4 h and 8 h respectively. After annealing in pure oxygen atmosphere, high-quality ZnO thin film was obtained. X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS) were employed to characterize the quality of the films. Based on the ZnO films, SAW filters were fabricated by lift-off technique. When the thickness of ZnO film was 0.63 ¿m and IDT ¿ was 6 ¿m, the SAW velocity was 5814 m/s.