Simulation study of switching mechanism in carbon-based resistive memory with molecular dynamics and Extended Hückel Theory-based NEGF method

摘要

Switching processes of carbon-based resistive memory cells are simulated on a fully atomistic level by the molecular dynamics (MD) method and the Extended-Hu¿ckel-Theory-based Non Equilibrium Green's Function (EHT-NEGF) method. Graphitic filament breakage and re-growth are found to be responsible for the switching of resistance of carbon-based memory. Key parameters that affect the switching speed of a memory cell are studied and trade-off between speed and power is discussed.