Test Structure for IC(VBE) Parameter Determination of Low Voltage Applications

摘要

The temperature dependence of the IC(VBE) relationshipcan be characterised by two parameters: EG and XTI. Theclassical method to extract these parameters consists in a"best fitting" from measured VBE(T) values, using leastsquare algorithm at constant collector current. Thismethod involves an accurate measurement of VBE voltageand an accurate value of the operating temperature. Wepropose in this paper, a configurable test structurededicated to the extraction of temperature dependence ofIC(VBE) characteristic for BJT designed with bipolar orBiCMOS processes. This allows a direct measurement ofdie temperature and consequently an accuratemeasurement of VBE(T). First, the classical extractionmethod is explained. Then, the implementation techniquesof the new method are discussed, the improvement of thedesign is presented.