首页> 外文会议>Electron Devices Meeting (IEDM), 2009 >A discharge-based multi-pulse technique (DMP) for probing electron trap energy distribution in high-k materials for Flash memory application
【24h】

A discharge-based multi-pulse technique (DMP) for probing electron trap energy distribution in high-k materials for Flash memory application

机译:一种基于放电的多脉冲技术(DMP),用于探测闪存应用中高k材料中的电子陷阱能量分布

获取原文

摘要

Electron trap energy distribution in the bulk of high-k materials is the essential information required for accurate retention prediction and fast material and processing optimization in Flash memory application. A new discharge-based multi-pulse technique (DMP) has been developed in this work, which, for the first time, gives this distribution across the bulk of high-k dielectric layer. Electron trap energy distributions in HfO2, Al2O3 and HfAlO stacks have been extracted and compared to identify the effects of material variation.
机译:高k材料中的电子陷阱能量分布是闪存应用中准确保留预测以及快速材料和工艺优化所需的基本信息。在这项工作中开发了一种新的基于放电的多脉冲技术(DMP),该技术首次在整个高k电介质层中实现了这种分布。提取并比较了HfO 2 ,Al 2 O 3 和HfAlO堆中的电子陷阱能分布,以确定材料变化的影响。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号