Record-high electron mobility in Ge n-MOSFETs exceeding Si universality

摘要

We have demonstrated very high electron mobility in Ge n-MOSFETs which exceeds the universal one in Si-MOSFETs. The peak electron mobility on Ge n-MOSFETs is about 1100 cm²/Vsec in Al/GeO₂/Ge stack. This has been achieved by taking care of Ge/GeO₂ channel interface based on thermodynamic and kinetic control. Since it is clarified that the mobility is still limited by remaining scattering sources, the present results promise us to expect much higher performance Ge CMOS.