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>Reliability of MEMS Materials: Mechanical Characterization of Thin-Films using the Wafer Scale Bulge Test and Improved Microtensile Techniques
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Reliability of MEMS Materials: Mechanical Characterization of Thin-Films using the Wafer Scale Bulge Test and Improved Microtensile Techniques
This paper reports on recent improvements of the bulge and microtensile techniques for the reliable extraction of material parameters such as the Young's modulus E, Poisson's ratio v, plane strain modulus E_(ps) = E/(1-V_2), prestress σ_0, fracture strength μ, Weibull modulus m and strain hardening coefficients n, and on the direct comparison between the two methods. The bulge technique is extended to full wafer measurements enabling throughputs of data with statistical relevance whereas key improvements of a previous fabrication process of microtensile specimens lead now to much higher yields, approaching 100%. Both techniques are applied to an extensive set of materials, brittle and ductile, typically used in MEMS applications. These include thin films of silicon nitride, silicon oxide, polycrystalline silicon and aluminum deposited by techniques such as thermal oxidation, LPCVD, PECVD and PVD.
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机译:本文报道了凸出和微拉伸技术的最新改进,用于可靠地提取材料参数,例如杨氏模量E,泊松比v,平面应变模量E_(ps)= E /(1-V_2),预应力σ_0,断裂强度μ,威布尔模量m和应变硬化系数n,以及两种方法之间的直接比较。凸出技术已扩展到完整晶片测量,可实现具有统计相关性的数据吞吐量,而以前的微拉伸试样制造工艺的关键改进现在可带来更高的良率,接近100%。两种技术都适用于通常在MEMS应用中使用的各种材料(脆性和延性)。这些包括通过诸如热氧化,LPCVD,PECVD和PVD的技术沉积的氮化硅,氧化硅,多晶硅和铝的薄膜。
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