A 1.8/2.4-ghz dualband cmos low noise amplifier using miller capacitance tuning

摘要

This paper describes an inductively source degenerated dual-band low noise amplifier (LNA) designed in a standard CMOS 0.18 µm TSMC process. The dual-band LNA can be tuned to 1.8-GHz and 2.4-GHz. The impedance matching is obtained at the required frequency bands using Miller-capacitance tuning. The designed LNA exhibits a gain of 18.2dB and 16.2dB and a noise figure of 5.0dB and 3.7dB at 1.8 and 2.4-GHz respectively. The LNA design is carried out using Mentor Graphics Eldo software.