Tin sulfide (SnS) has received much attention because of its high absorption coefficient, suitable band-gap and little toxicity. In this paper, doped-SnS thin films were fabricated by vacuum evaporation. Sb, Sb2O3, Se, Te, In, In2O3, Se and In2O3 were used as dopant sources. The thickness and conductance of various doped-SnS thin films were measured, and then the resistivities and the ratio of photo-conductivity to dark-conductivity (Gphoto/Gdark) of these films were calculated. From the experimental results, Sb is the best dopant source. The resistivity of Sb doped-SnS thin film is reduced by four orders of magnitude and the value of Gphoto/Gdark is double. In addition, the influence of Sb doping content on the electrical properties of doped-SnS thin films was also investigated, and the optimum doping content of Sb is 1.3%~1.5% in weight.
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