The Effect of Ionizing Radiations on the Structural, Electrical and Optical Properties of AIIBVI Polycrystalline Thin Films Used as Solar Cell Materials

摘要

The effects of irradiation with high-energy protons (3 MeV, up to a fluency of 10~13 protons/cm~2), on structural, electrical and optical properties of polycrystalline CdS and CdTe thin films have been investigated. XRD investigation has revealed that the films contain wurtzite-type CdS, (001) preferentially oriented in the growth direction, and cubic phase CdTe, respectively. The defects induced by ionizing radiations have been studied by thermally stimulated current spectroscopy (TSC). Eight kinds of traps were observed in the CdS films and their energies, densities and capture cross sections were quantified.