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Photoresist Free Negative and Positive Photolithographic Deposition of Zirconium Oxide Films from Photosensitive Metal Organic Compounds

机译:光敏性金属有机化合物对氧化锆薄膜的无光刻胶正负光刻沉积

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Photoresist free photolithographic deposition of zirconium oxide from photosensitive zirconium complexes has been achieved using photochemical metal organic deposition. In this contribution, the deposition of patterned zirconium oxide is used as an example to demonstrate both negative and positive photolithographic deposition. In the prototypical deposition of zirconium oxide by photochemical metal organic deposition, a solution containing zirconium (IV) di-n-butoxide bis(2,4-pentanedionate) was used to spin coat a silicon substrate, resulting in an amorphous film. The film was then exposed to UV light leading to the formation of zirconium oxide and other volatile products. The resultant zirconium oxide film was investigated by X-ray diffraction and Auger Electron Spectroscopy. Irradiating the precursor film through a photo mask led to a latent image which yielded either a negative or a positive pattern dependent upon developer. Subject to further photochemical or thermal treatment, a zirconium oxide pattern can be obtained. Similar results were obtained using a series of zirconium (IV) complexes. Both positive and negative patterns of zirconium oxide with 2 micron feature sizes were obtained.
机译:使用光化学金属有机沉积已经实现了从光敏锆络合物的氧化锆的无光刻胶光刻沉积。在此贡献中,将图案化的氧化锆的沉积用作示例,以演示负片和正片光刻沉积。在通过光化学金属有机沉积进行氧化锆的典型沉积中,使用含锆(IV)二正丁醇双(2,4-戊二酮酸酯)的溶液旋涂硅基板,得到非晶膜。然后将膜暴露于紫外线下,导致形成氧化锆和其他挥发性产物。通过X射线衍射和俄歇电子能谱研究所得的氧化锆膜。通过光掩模照射前体膜产生潜像,该潜像产生依赖于显影剂的负图案或正图案。经受进一步的光化学或热处理,可以获得氧化锆图案。使用一系列锆(IV)配合物可获得相似的结果。获得具有2微米特征尺寸的氧化锆的正图和负图。

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