...
首页> 外文期刊>Journal of Photopolymer Science and Technology >Positive and Negative Photolithographic Deposition of Titanium Dioxide from Photosensitive Titanium Complexes
【24h】

Positive and Negative Photolithographic Deposition of Titanium Dioxide from Photosensitive Titanium Complexes

机译:光敏钛配合物对钛白粉的正负光刻沉积

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

Lithographic deposition of titanium oxide films using photochemical metal organic deposition from titanium (IV) complexes is demonstrated in this paper.In this paper we explore the chemistry of thin films of titanium (IV) di-n-butoxide bis(2-ethylhexanoate),titanium (IV) di-n-butoxide bis(2-ethyl-2-hydroxybutyrate),titanium (IV) diisopropoxide bis(2,4-pentanedionate),and titanium (IV) diisopropoxide bis(ethyl acetoacetate).These complexes could all be prepared by ligand exchange reaction from the appropriate precursors.Thin films of each of these compounds could be cast by spin coating from solutions.All the complexes underwent photodecomposition to form titanium dioxide films although only titanium (IV) di-n-butoxide bis(2-ethylhexanoate) did so without the formation of an intermediate.Since all of the precursors were soluble negative lithography resulted in the direct deposition of titanium dioxide from these precursors.In contrast we were only able to demonstrate positive lithography on all the films except those constructed from titanium (IV) di-n-butoxide bis(2-ethylhexanoate).Positive lithography was conducted by exposing a region developing to remove film in the exposed regions followed by blanket exposure to convert the remaining regions to titanium dioxide.Patterns of titanium oxide with a feature size of 1 micron and a resolution of 1 micron were routinely achieved by both positive and negative photolithography.These precursors are also potential candidates for deep UV lithography in fabricating features of sub-50 nanometres.
机译:本文证明了使用钛(IV)配合物的光化学金属有机沉积法对氧化钛膜进行光刻的方法。本文探讨了钛(IV)二正丁氧基双(2-乙基己酸)薄膜的化学性质,钛(IV)二正丁氧基双(2-乙基-2-羟基丁酸)钛,钛(IV)二异丙氧基双(2,4-戊二酸)和钛(IV)二异丙氧基双乙酸乙酰乙酸乙酯。可以通过适当的前体通过配体交换反应制备这些化合物。每种化合物的薄膜都可以通过溶液旋涂来流延。所有配合物都经过光分解形成二氧化钛膜,尽管只有二(IV)二正丁氧基钛(IV) 2-乙基己酸酯)没有形成中间体,因为所有前体都是可溶的负性光刻技术,导致这些前体直接沉积了二氧化钛,而我们只能证明是正性光刻技术y在除由钛(IV)二正丁氧基双(2-乙基己酸)钛构成的膜上的所有膜上进行正光刻。通过曝光显影区域以去除曝光区域中的膜,然后进行全面曝光以转换其余区域来进行正性光刻。正片和负片光刻都可以常规获得特征尺寸为1微米,分辨率为1微米的氧化钛图案,这些前体也是制造50纳米以下特征的深紫外光刻的潜在候选者。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号