4.5 kV 4H-SiC diodes with ideal forward characteristic

摘要

4H-SiC diodes with 4.5 kV blocking and epitaxially grown anodeemitters show near theoretical forward voltages of 3.08 V at 100 A/cm² and 4.10 V at 1000 A/cm² at RT (2.96 V and 4.15V at 125° C), while diodes with implanted emitters show 3.5-3.8 V at100 A/cm² with -4 mV/K. The transient recovery losses(E_rec, Q_rr) are as low as 1/100 of the referencesilicon device. Paralleling of the SiC diodes with silicon IGBTs enables400 A switching, and system loss savings of nearly 50% compared tostate-of-art silicon technology