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Diode circuit with ideal diode characteristic curve

机译:具有理想二极管特性曲线的二极管电路

摘要

The circuit includes a diode (7) and a power MOSFET (1) connected in parallel, using the control path of the power MOSFET. The load path forms the connection of an ideal diode. The gate connection of the power MOSFET has a predetermined voltage potential, and enables the MOSFET to be controlled in the flow direction of the diode, and to be isolated in the high resistance direction. Preferably, a Zener diode (6) is connected between gate (5) of the power MOSFET and the diode. A resistance is coupled between the power supply source (4) and the gate of the power MOSFET.
机译:该电路包括使用功率MOSFET的控制路径并联连接的二极管(7)和功率MOSFET(1)。负载路径形成理想二极管的连接。功率MOSFET的栅极连接具有预定的电压电势,使MOSFET能够在二极管的流动方向上受到控制,并在高电阻方向上被隔离。优选地,齐纳二极管(6)连接在功率MOSFET的栅极(5)和二极管之间。电阻耦合在电源(4)和功率MOSFET的栅极之间。

著录项

  • 公开/公告号EP0936525B1

    专利类型

  • 公开/公告日2001-10-04

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号EP19990101523

  • 发明设计人 XU CHIHAO;

    申请日1999-01-27

  • 分类号G05F3/16;

  • 国家 EP

  • 入库时间 2022-08-22 01:16:35

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