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Inductor- and Transformer-based Integrated RF Oscillators: A Comparative Study

机译:基于电感器和变压器的集成射频振荡器:比较研究

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Prior publications claim that transformer-based resonators achieve improvements in quality factor (Q), which translates to better phase noise in oscillators. This paper combines rigorous analysis with on-chip practical considerations for various types of on-chip transformers to demonstrate the importance of the resonator topology for Q-enhancement. We show that for a fixed silicon chip area, transformer-based resonators do not exhibit superior performance compared to inductor-based designs. Prototype oscillators are implemented at 5GHz in a 0.18mum CMOS process to validate these claims
机译:先前的出版物声称基于变压器的谐振器实现了品质因数(Q)的改善,从而改善了振荡器的相位噪声。本文将严格的分析与各种类型的片上变压器的片上实际考虑相结合,以证明谐振器拓扑对于Q增强的重要性。我们显示出,对于固定的硅芯片面积,与基于电感器的设计相比,基于变压器的谐振器没有表现出优越的性能。原型振荡器在0.18μmCMOS工艺中以5GHz的频率实现,以验证这些说法。

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