首页> 外文期刊>Microwave and Wireless Components Letters, IEEE >A Hybrid Transformer-Based CMOS Duplexer With a Single-Ended Notch-Filtered LNA for Highly Integrated Tunable RF Front-Ends
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A Hybrid Transformer-Based CMOS Duplexer With a Single-Ended Notch-Filtered LNA for Highly Integrated Tunable RF Front-Ends

机译:基于混合变压器的CMOS双工器,具有单端陷波滤波LNA,用于高度集成的可调射频前端

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摘要

A hybrid transformer-based CMOS tunable duplexer with a single-ended blocker-tolerant low-noise amplifier (LNA) is proposed for a highly integrated reconfigurable RF front-end architecture. The proposed LNA adopts Q-enhanced LC notch filter at the source of the cascode device and LC bandpass filter at the load. It improves the blocker tolerance and linearity of the receiver by rejecting unwanted out-of-band blockers and transmitter (TX) leakage signals. The duplexer with the notch-filtered LNA was fabricated in a 65-nm CMOS process. It has a voltage gain of 24.2 dB from the antenna to the LNA output with 28-dB notch filtering, cascaded noise figure of 6.4 dB, TX insertion loss of 3.8 dB, and IIP3FD of 52.4 dBm. It can also cover a mid-band range from 1.6 to 2.2 GHz in cellular applications. It draws an average current of 8 mA from a supply voltage of 1.2 V and has an active area of 1.19 mm2.
机译:针对高度集成的可重构RF前端架构,提出了一种基于混合变压器的CMOS可调双工器,该双工器具有单端容忍低噪声放大器(LNA)。拟议的LNA在共源共栅设备的源极采用Q增强型LC陷波滤波器,在负载处采用LC带通滤波器。它通过拒绝不必要的带外阻塞和发送器(TX)泄漏信号,提高了接收器的阻塞器容限和线性度。具有陷波滤波的LNA的双工器是在65 nm CMOS工艺中制造的。从天线到LNA输出的电压增益为24.2 dB,具有28 dB陷波滤波,6.4 dB的级联噪声系数,3.8 dB的TX插入损耗和52.4 dBm的IIP3FD。在蜂窝应用中,它还可覆盖1.6至2.2 GHz的中频带范围。它从1.2 V的电源电压汲取8 mA的平均电流,其有效面积为1.19 mm n 2 n。

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