Direct bonding of GaInAsP/InP membrane structure on SOI wafer

摘要

Wafer bonding technology was investigated to integrate active photonic devices on a silicon on insulator (SOI) wafer for very compact photonic-integrated circuits. A single-quantum-well (SQW) GaInAsP/InP membrane structure bonded onto an SOI wafer was successfully obtained by a direct bonding method with a thermal annealing at 300-450/spl deg/C under H/sub 2/ atmosphere. The PL intensity of the SQW membrane structure did not degrade after this direct bonding process and its spectral shape did not change. This wafer bonding technique can be applied to realize a direct optical coupling through SOI passive waveguides from membrane active region.