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Characteristics of BSCCO thin films fabricated by using the layer by layer deposition andevaporation deposition method

机译:逐层沉积和蒸发沉积方法制备的BSCCO薄膜的特性

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The BSCCO thin film fabricated by using the layer by layer deposition method was compared with the BSCCO thinfilm fabricated by using the evaporation method. Reevaporation in the form of Bi atoms or Bi2O3 molecules easilybring out the deficiency of Bi atoms in thin film due to the long sputtering time of the layer by layer deposition. Onthe other hand, the respective atom numbers corresponding to BSCCO phase is concurrently supplied on the filmsurface in the evaporation deposition process and leads to BSCCO phase formation. Also, it is cofirmed that byoptimizing the deposition condition, each single phase of the Bi2201 phase and the Bi2212 phase can befabricated, the sticking coefficient of Bi element is clearly related to the changing of substrate temperature and theformation of the Bi2212 phase.
机译:比较了使用逐层沉积法制造的BSCCO薄膜与BSCCO薄膜 使用蒸发方法制成的薄膜。容易以Bi原子或Bi2O3分子的形式再蒸发 由于逐层沉积的溅射时间长,导致薄膜中Bi原子不足。在 另一方面,在膜上同时提供了与BSCCO相对应的原子数。 在蒸发沉积过程中会形成表面,并导致BSCCO相的形成。另外,可以肯定的是 通过优化沉积条件,可以将Bi2201相和Bi2212相的每个单相 制备后,Bi元素的黏着系数显然与衬底温度的变化和 Bi2212相的形成。

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