On the temperature behavior of Si/SiGe/Si-HBT: comparison betweenmeasurements and numerical simulation

机译：Si / SiGe / Si-HBT的温度行为：测量与数值模拟的比较

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This paper deals with the temperature behavior of Si/SiGe/Si-HBT.Experimental data are compared with results of numerical simulations. DCand RF results are explained by analytical formulas. It was found thatthe temperature behavior of Si/SiGe/Si HBT are similar to that of allsilicon devices

机译：本文讨论了Si / SiGe / Si-HBT的温度行为。将实验数据与数值模拟结果进行比较。直流电射频结果由解析公式解释。发现 Si / SiGe / Si HBT的温度行为与所有硅器件

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《2005 IEEE 2nd Symposium on Multi-Agent Security and Survivability》|2005年|p.37-41|共5页
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Nuernbergk D.M.; Forster H.; Schwierz F.; Yuan J.S.; Paasch G.;
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中图分类自动化技术、计算机技术;
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On the temperature behavior of Si/SiGe/Si-HBT: comparison betweenmeasurements and numerical simulation

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