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On the temperature behavior of Si/SiGe/Si-HBT: comparison between measurements and numerical simulation

机译：Si / SiGe / Si-HBT的温度行为：测量与数值模拟的比较

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摘要

This paper deals with the temperature behavior of Si/SiGe/Si-HBT. Experimental data are compared with results of numerical simulations. DC and RF results are explained by analytical formulas. It was found that the temperature behavior of Si/SiGe/Si HBT are similar to that of all silicon devices.

机译：本文讨论了Si / SiGe / Si-HBT的温度行为。将实验数据与数值模拟结果进行比较。直流和射频结果由解析公式解释。发现Si / SiGe / Si HBT的温度行为与所有硅器件的温度行为相似。

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《》|1998年|P.37-41|共5页
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Nuernbergk; D.M.; Forster; H.;
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中图分类无线电电子学、电信技术;
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On the temperature behavior of Si/SiGe/Si-HBT: comparison between measurements and numerical simulation

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