Quantum energy levels in mass-transported InAsP quantum wires buried in InGaAsP/InP

机译：掩埋在InGaAsP / InP中的大量传输的InAsP量子线中的量子能级

获取原文

获取外文期刊封面目录资料

页面导航

摘要
著录项
引文网络
相似文献
相关主题

摘要

Quantum energy levels and wavefunctions in mass-transported InAsP quantum wires have been calculated. The calculations have been compared with experimental results; good agreement has been obtained on the polarization anisotropy of the optical emission.

机译：已经计算了质量传输的InAsP量子线中的量子能级和波函数。计算结果已与实验结果进行了比较;在光发射的偏振各向异性上已经取得了良好的一致性。

著录项

来源
《Indium Phosphide and Related Materials, 2005. International Conference on》|2005年|P.359-362|共4页
会议地点
作者
Ohtsuka T.; Darja J.; Nakada M.; Nakano Y.;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类工业技术;
关键词
III-V semiconductors; indium compounds; interface phenomena; photoluminescence; semiconductor quantum wires; InGaAsP-InP; InGaAsP-InP material; mass-transported InAsP quantum wires; optical emission; photoluminescence; polarization anisotropy; quantum energy levels;

机译：III-V半导体;铟化合物;界面现象;光致发光;半导体量子线; InGaAsP-InP; InGaAsP-InP材料;质量传输的InAsP量子线;光发射;光致发光;极化各向异性;量子能级;

相似文献

外文文献
中文文献
专利

1. External electric field effect on exciton binding energy in InGaAsP/InP cylindrical quantum wires [J] . Wang Hailong, Wang Wenjuan, Gong Qian, Physica, B. Condensed Matter . 2016,第Null期

机译：外部电场对InGaAsP / InP圆柱量子线中激子结合能的影响
2. An efficient in-plane energy level shift in InAs/InGaAsP/InP quantum dots by selective area growth [J] . Journal of Applied Physics . 2010,第4期

机译：通过选择性区域生长实现InAs / InGaAsP / InP量子点中的有效面内能级转移
3. An efficient in-plane energy level shift in InAs/InGaAsP/InP quantum dots by selective area growth [J] . D. H. Nguyen, J. Park, Y. D. Jang, Journal of Applied Physics . 2010,第4期

机译：通过选择性区域生长实现InAs / InGaAsP / InP量子点中的有效面内能级转移
4. Quantum Energy Levels in Mass-Transported InAsP Quantum Wires buried in InGaAsP/InP [C] . Takafumi Ohtsuka, Jesse Darja, Muneki Nakada, International Conference on Indium Phosphide and Related Material . 2005

机译：大规模运输的量子能量水平埋在ingaASP / INP中的量子线
5. Power and spectral characterization of InGaAsP-InP multi-quantum well lasers [D] . Prosyk, Kelvin. 1998

机译：InGaASP-INP多量子孔激光器的功率和光谱表征
6. Influence of TOPO and TOPO-CdSe/ZnS Quantum Dots on Luminescence Photodynamics of InP/InAsP/InPHeterostructure Nanowires [O] . Artem I. Khrebtov, Vladimir V. Danilov, Anastasia S. Kulagina, 2021

机译：TOPO和TOPO-CDSE / ZNS量子点对INP / INASP / INPHERESTULUSTURE纳米线发光光学动力学的影响
7. Electron transport in gated InGaAs and InAsP quantum well wires in selectively grown InP ridge structures [O] . Granger, G., Kam, A., Studenikin, S. A., 2010

机译：选择性生长的InP脊结构中的栅极InGaAs和InAsP量子阱线中的电子传输

Quantum energy levels in mass-transported InAsP quantum wires buried in InGaAsP/InP

摘要

著录项

引文网络

相似文献

相关主题

期刊订阅