An efficient in-plane energy level shift in InAs/InGaAsP/InP quantum dots by selective area growth

摘要

Selective area growth was adopted to grow high-quality quantum dots (QDs) of different energy levels on the same plane at 1.5 μm. At room temperature, the photoluminescence (PL) peak of InAs/InGaAsP QDs on InP substrate was shifted from 1445 to 1570 nm for sample 1 (from 1385 to 1485 nm for sample 2) in a plane, with a PL intensity comparable to those of regular samples grown without dielectric patterns. The dot shape was a round dome, with the density reduced by 28% and the height increased by 17%. Time-resolved PL indicated that the selectively grown QDs behaved similarly to regular QDs. These results open up a practical method for in-plane integration of QD devices.