CGS(D)/CS(D)GCapacitance Phenomenon of 100nm Fully-Depleted SOI CMOS Devices with HfO2High-K Gate Dielectric Considering Vertical and Fringing Displacement Effects
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机译：具有HfO 2 高K栅极的100nm全耗尽SOI CMOS器件的C GS（D） / C S（D）G 电容现象考虑垂直和边缘位移效应的电介质
This paper reports the CGS(D)/CS(D)Gcapacitance phenomenon of 100nm fully-depleted (FD) SOI CMOS devices with HfO2high-k gate dielectric considering vertical and fringing displacement effect. According to the 2D simulation results, a unique two-step CS(D)G/CGSversus VGcurve exists for the device with the 1.5nm HfO2gate dielectric due to the vertical and fringing displacement effects.
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机译：本文报道了具有HfO 2 <的100nm全耗尽（FD）SOI CMOS器件的C GS（D） / C S（D）G 电容现象考虑垂直和边缘位移效应的高k栅极电介质。根据二维仿真结果，该设备存在唯一的两步C S（D）G / C GS 与V G 曲线1.5nm HfO 2 栅极电介质由于垂直和边缘位移效应而产生。
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